An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. They are found in in many modern appliances: variable frequency drives (VFDs), electric cars, trains, variable speed refrigerators, lamp ballasts, air-conditioners and other consumer devices.
These devices are highly complex, expensive and place huge demands on their component parts. The majority of the failure mechanisms in IGBT units in the field are traceable back to excessive internal temperatures and/or thermal stress. It is well proven and accepted that voiding at critical interfaces is the major contributing factor to these failures.
This paper will investigate these voiding issues and explore X-ray technology as a non-destructive and non-damaging method of inspection during and immediately after production.
This paper will discuss: