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White Paper Download: Failure Mechanisms in IGBTs Related to Voiding

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. They are found in in many modern appliances: variable frequency drives (VFDs), electric cars, trains, variable
speed refrigerators, lamp ballasts, air-conditioners and other consumer devices.

These devices are highly complex, expensive and place huge demands on their component parts. The majority of the failure mechanisms in IGBT units in the field are traceable back to excessive internal temperatures and/or thermal stress. It is well proven and accepted that voiding at critical interfaces is the major contributing factor to these failures.

This paper will investigate these voiding issues and explore X-ray technology as a non-destructive and non-damaging method of inspection during and immediately after production.

This paper will discuss:

  • Improving the process by reducing voiding.
  • Increasing long-term reliability of these expensive to replace parts.
  • Avoiding failures that create huge cost and warranty issues.
Learn how inclined CT can improve the inspection process and yield better production results. 

Fill out the form on this page to download the White Paper!

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